i hope you know how to read these things.
the one you have now
http://www.irf.com/product-info/datasheets/data/irl3803.pdf
one that has a claim of low voltage (mabey low voltage drop)
http://www.irf.com/product-info/datasheets/data/irf7822.pdf
the delay times for switching are much faster on this here second one.
the Vgs thing is the same for both ??
here is it all explained
http://www.powerdesigners.com/InfoWeb/design_center/articles/MOSFETs/mosfets.shtm
then my head blew up
indications are that a good gate trigger voltage and speed, is needed on any of them to get to these low resistances. without speed, the mosfet will spend more time in high resistance, and therfore lots of heat.
but i KNOW there are lower voltage mosfet GATES, because the full switch is the key to low resistance, the lower the gate trigger voltage works , the better.
these both seem to be for 12V stuff even if they trigger much lower than that?
Mosfets can be parelleled so the small ones for very low voltage applications could potentially be triggered with the same trigger and parelleled for massive currents.
i donno, its all well beyond my skill, but i have had the same problem before., i cant read the data sheet, they dont speak english, some sort of tech gibberish
see here is another one
Optimised for high-current applications where a single control MOSFET is desired, the IRF6712S achieves a low gate charge (Qg) of 13nC and gate-to-drain charge (Qgd) of 4.4nC combined with low typical on-state resistance of 3.8 mOhm at 10VGS and 6.7 mOhm at 4.5VGS
so what good does that do? nothing, cause you dont even have the 4.5v let alone the 10v
they say we would need a "logic level" mosfet, which the max gate voltage is 5V (saturated) and the part number would start with an L.
also the minimum threshold value does not mean much. but in reality dont we need a level even lower than what is intended to be driven with 5V inputs.
and it seems that the max "Vgs" isnt required for full switching, indications are that its is the max before gate failure.