They require almost no current, Nano Amps, to stay on or off. But require AMPS of current in a short spike to turn on or off quickly. In high current applications, a fast turn on or off is critical. In lower current situations, it's not as critical depending on the FET. A tiny SOT-223 FET would need fast turn on and off to suvive a couple of amps, while a big one (TO-247, etc) can do 2 amps all day in is linear range.One great feature of MOSFETs is that they need only the tiniest amount of current through the gate to turn on....they're voltage controlled.
John
I agree except that an application involving amps, or even hundreds of amps, can actually benefit from a slow turn on or off. It all depends on the application.They require almost no current, Nano Amps, to stay on or off. But require AMPS of current in a short spike to turn on or off quickly. In high current applications, a fast turn on or off is critical. In lower current situations, it's not as critical depending on the FET. A tiny SOT-223 FET would need fast turn on and off to suvive a couple of amps, while a big one (TO-247, etc) can do 2 amps all day in is linear range.
Don't they heat up an aweful lot? Sure, with proper heat sinking, provided you stay under the curve of safe operation, "slow" is a matter of degree.I agree except that an application involving amps, or even hundreds of amps, can actually benefit from a slow turn on or off. It all depends on the application.
For high-frequency work, speed is everything and the less time you spend in the MOSFET's linear region the better. But, I build electronic loads from 100W to the multi-kilowatt level with MOSFETs that operate in their linear region and up to hard-on. When switching a 1,000A load off, it's much better to do so slowly to reduce the turn-off spike induced by the load or the inductance of the wiring and to minimize EMI. Each MOSFET is driven by an op-amp that only has a 30mA short-circuit current rating with an R-C filter on the gate to slow down the current flow, and thus the switching time, even further.
John
Hi Jimmy,Don't they heat up an aweful lot? Sure, with proper heat sinking, provided you stay under the curve of safe operation, "slow" is a matter of degree.
How big are these loads? I would imagine they are quite heavily heat-sunk. (is that even a word?). I understand exactly what you're saying, and with respect to inductance it makes perfect sense. Those hard turn-on turn-off current transitions are hell on inductance. But would the short wiring in a mag-mod and the filament of a bulb be a significant inductive load? I ask because I'm curious, not because I'm trying to poke holes in your reply. Which I think is quite sound.
You and me both, John. My first attemp at building a PWM regulator for Mag lights was based on a 40kHz regulator (TI 5001). My GOD the ringing was awful. Most of the stuff I do now is low frequency. 175Hz for the JM-SST and ~250Hz for the HRDC (or PhD of you choose)IMHO, the inductance of the wiring in a mag-mod isn't that large but, IIRC, the faster the turn-on/turn-off is the more of an effect any inductance has. So I guess it all depends? I'm just glad that all my circuitry runs really, really slow and that I don't have to deal switcher power supplies and high-frequency stuff. Saves a lot of my neurons from being smoked. :p
John
...to reduce the voltage. The two resistors act as a potential divider that reduces the voltage by 10/(4.7+10) or approximately 2/3.I understand that biasing the gate + turns the mosfet on. the 4.7 resistor to knock the voltage down makes sense because the gate can only take so much voltage, but what's the 10k for?
Not necessarily. The short answer is that there is no real point reducing the voltage applied to the gate unless it is too close to the maximum permitted. So for instance, if we look at the data sheet for the IRF540N we see under "absolute maximum ratings" that the maximum gate-to-source voltage is +/-20. So unless there is a danger of approaching or exceeding 20 V (for this specific MOSFET) there is no need to reduce the gate voltage to a lower value than the battery voltage.If let's say an IRF mosfet likes 10 volts at the gate to turn it on "hard", should we be checking the voltage at the gate and adjusting the resistor feeding the gate accordingly depending on our battery pack?