Noncontact characterization of sheet resistance of indium–tin-oxide thin films by using a near-field microwave microprobe
Soonil Yuna, Sunguk Naa, Arsen Babajayana, Hyunjung Kima, Barry Friedmanb and Kiejin Leea, ,
aDepartment of Physics and Interdisciplinary Program of Integrated Biotechnology, Sogang University, Seoul 121-742, South Korea
bDepartment of Physics, Sam Houston State University, Huntsville, TX 77341, USA
Received 29 August 2005; revised 20 March 2006; accepted 20 March 2006. Available online 4 May 2006.
Abstract
The sheet resistance of indium–tin-oxide (ITO) thin films with different microstructures and morphologies was measured by using a near-field scanning microwave microprobe (NSMM). The NSMM system was coupled to a dielectric resonator with a distance regulation system at an operating frequency
f = 5.2–5.5 GHz. ITO thin films with different microstructures and morphology were characterized by X-ray diffraction and atomic force microscopy. As the sheet resistance increased, the intensity ratio of the (222) to the (400) diffraction peak increased and the surface roughness increased.