A p-channel MOSFET is more akin to a PNP transistor than to an NPN transistor, but they are different beasties by a long ways.
A FET is a 'field effect transistor'. You have a semiconductor channel, with no PN or NP junctions along it. This channel is essentially a resistor made semiconductor materials. A 'gate' manipulates an electric field across this channel, and changes the population of charge carriers available, or changes the cross section of the channel which conducts current. Essentially the 'gate' can change the resistance of the channel.
No current flows between the gate and the channel, so a FET is a _voltage_ controlled device, quite unlike a regular bipolar junction transistor in which _current_ flow through the base terminal controls the _current_ flowing between emitter and collector.
The gate electrode may be isolated from the channel by a PN junction, essentially a reverse biased diode. This sort of device is called a J-FET, or junction FET. The gate electrode may also be isolated from the channel by an insulating layer. This layer is made of metal oxide, thus Metal Oxide Semiconductor FET or MOSFET.
The reason that I said at the beginning that a p-FET is more akin to a PNP transistor is that the relative polarities of the terminal voltages are the same.
-Jon