It's a pic of the chip used. As you can see, triangular shape, not rectangular as usual. That allows for a better yield from a circular wafer. But the main point GaN on GaN allows to use larger current densities (250A/cm2 vs <150A/cm2 for GaN on saphire or SiC) suffering of less droop. Seems interesting for throwers, as it result on higher surface luminance. They have little advantage at low-medium current levels, because GaN on GaN is not as refined yet, but offer an interesting alternative to overdriven chips. On average, GaN on GaN allows to use about double current for a given size chip with less droop on efficiency.
As always, high current densities requires of a very good thermal path. I believe high current densities only worth on a few special applications, but for sure flashlights is one of them. But Soraa will need to be competitive on larger markets to suceed and be able to offer LED packages for us. Maybe we should write them and suggest we may be excellent costumers for them. 1.5- 2 sq mm chips would blow out XML and SSTs
One note for the hope is
Sunitomo and Soitec has just announced their success manufacturing 4 and 6 inch GaN wafers. Such breakthrough could allows for cheaper production of GaN on GaN chips.
