TOKYO, JAPAN - March 4, 2002 - Nichia Corporation announced today the development of high power indium gallium nitride (InGaN) LEDs achieving ten times the electrical power of current parts. The high power LEDs are housed in heat and UV resistant surface mount packages that can be installed using standard automated assembly methods (including solder reflow).
"Assembly manufacturers need components that are easy to install," said Noboru Tazaki, Managing Director and General Manager of Nichia's Optoelectronics Products Division. "Nichia's high power LEDs represent advanced technology, but more importantly the parts can be mounted with automated assembly equipment."
The new Nichia LEDs overcome low power limitations of current parts by increasing the area of the InGaN chip to 1 mm2 and powering the chip with up to two watts of electrical power. At a 350 mA current, photometric luminous flux for the packaged LEDs is 23 lm for white, 7 lm for blue, 28 lm for blue-green, and 20 lm for green.
Nichia developed two new packages to house the larger area InGaN chip. The NSCx180F is an entirely inorganic package; no organic plastics or organic resins are used. As a result, the package is resistant to the increased heat generated by larger area chips and is ideal for housing UV-emission InGaN LED chips. Lifetime is estimated at 100,000 hours.
The second new Nichia package, the NSCx190D, dissipates heat using an integrated copper heat sink. The result is an LED package with an 8° C / W thermal resistance, approximately twenty times lower than conventional LED packages. The package has a resin optic lens, making the part well suited for channel letter displays, traffic signals, and other specialty lighting applications.
Engineering samples of the parts will be available in Q2 of calendar 2002. Samples of the NSCx180F include InGaN chips emitting nearly 100 mW of 380 nm UV light at 500 mA, a world first. The thermal resistance of the NSCx180F is 15° C / W; the part is one centimeter square with a 2.3 mm height. The NSCx190D has an 11.2 mm width, 7.2 mm length, and 6 mm height; its estimated lifetime is 50,000 hours.
"Assembly manufacturers need components that are easy to install," said Noboru Tazaki, Managing Director and General Manager of Nichia's Optoelectronics Products Division. "Nichia's high power LEDs represent advanced technology, but more importantly the parts can be mounted with automated assembly equipment."
The new Nichia LEDs overcome low power limitations of current parts by increasing the area of the InGaN chip to 1 mm2 and powering the chip with up to two watts of electrical power. At a 350 mA current, photometric luminous flux for the packaged LEDs is 23 lm for white, 7 lm for blue, 28 lm for blue-green, and 20 lm for green.
Nichia developed two new packages to house the larger area InGaN chip. The NSCx180F is an entirely inorganic package; no organic plastics or organic resins are used. As a result, the package is resistant to the increased heat generated by larger area chips and is ideal for housing UV-emission InGaN LED chips. Lifetime is estimated at 100,000 hours.
The second new Nichia package, the NSCx190D, dissipates heat using an integrated copper heat sink. The result is an LED package with an 8° C / W thermal resistance, approximately twenty times lower than conventional LED packages. The package has a resin optic lens, making the part well suited for channel letter displays, traffic signals, and other specialty lighting applications.
Engineering samples of the parts will be available in Q2 of calendar 2002. Samples of the NSCx180F include InGaN chips emitting nearly 100 mW of 380 nm UV light at 500 mA, a world first. The thermal resistance of the NSCx180F is 15° C / W; the part is one centimeter square with a 2.3 mm height. The NSCx190D has an 11.2 mm width, 7.2 mm length, and 6 mm height; its estimated lifetime is 50,000 hours.
