Calina
Enlightened
Well, almost but it looks promising.
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Nichia has developed LEDs with indium tin oxide contacts that can deliver an efficacy of 138 lm/W and an output of 402 lumens at 2A.
Japanese LED chip manufacturer Nichia has produced a small white-emitting LED chip that has an efficacy of 138 lm/W at 20 mA, and a larger device that delivers 92 lm/W at 350 mA.
The small chip, which measures 240 µm x 420 µm, has a color temperature of 5450K, a wall plug efficiency of 41.7% , and a forward voltage of 3.11 V at 20 mA.
The 1 mm x1 mm chip has a slightly lower color temperature and efficacy, but can deliver 106 lumens at 350 mA and 402 lumens at 2A, which is equivalent to the total flux of a 30W incandescent lamp.
Both of the MOCVD-grown devices produce white light by exciting a yellow YAG phosphor with 450 nm emission from an InGaN/GaN LED. The high efficacy of the chips results from improvements in external quantum efficiency, according to Nichia's researchers.
See the whole news release: http://compoundsemiconductor.net/articles/news/10/11/15/1
_______________________________________________
Nichia has developed LEDs with indium tin oxide contacts that can deliver an efficacy of 138 lm/W and an output of 402 lumens at 2A.
Japanese LED chip manufacturer Nichia has produced a small white-emitting LED chip that has an efficacy of 138 lm/W at 20 mA, and a larger device that delivers 92 lm/W at 350 mA.
The small chip, which measures 240 µm x 420 µm, has a color temperature of 5450K, a wall plug efficiency of 41.7% , and a forward voltage of 3.11 V at 20 mA.
The 1 mm x1 mm chip has a slightly lower color temperature and efficacy, but can deliver 106 lumens at 350 mA and 402 lumens at 2A, which is equivalent to the total flux of a 30W incandescent lamp.
Both of the MOCVD-grown devices produce white light by exciting a yellow YAG phosphor with 450 nm emission from an InGaN/GaN LED. The high efficacy of the chips results from improvements in external quantum efficiency, according to Nichia's researchers.
See the whole news release: http://compoundsemiconductor.net/articles/news/10/11/15/1